Circuit-level reliability analysis based on an atomic trap-based model for bias temperature instability (BTI) | BEAMS

Circuit-level reliability analysis based on an atomic trap-based model for bias temperature instability (BTI)

Project information
Project type: 
Master thesis
Academic year: 
2012-2013
Status: 
Running
Research unit: 
Embedded electronics
BEAMS supervisors
Academic promoter
Supervisor
External supervisors
Praveen Raghavan
Industrial promoter
Halil Kükner
Councillor
Student(s)
Sébastien Morrisson

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